Single n-GaN microwire/p-Silicon thin film heterojunction light-emitting diode
- Authors
- Ahn, Jaehui; Mastro, Michael A.; Klein, Paul B.; Hite, Jennifer K.; Feigelson, Boris; Eddy, Charles R., Jr.; Kim, Jihyun
- Issue Date
- 24-10월-2011
- Publisher
- OPTICAL SOC AMER
- Citation
- OPTICS EXPRESS, v.19, no.22, pp.21692 - 21697
- Indexed
- SCIE
SCOPUS
- Journal Title
- OPTICS EXPRESS
- Volume
- 19
- Number
- 22
- Start Page
- 21692
- End Page
- 21697
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/111353
- DOI
- 10.1364/OE.19.021692
- ISSN
- 1094-4087
- Abstract
- The emission and waveguiding properties of individual GaN microwires as well as devices based on an n-GaN microwire / p-Si (100) junction were studied for relevance in optoelectronics and optical circuits. Pulsed photoluminescence of the GaN microwire excited in the transverse or longitudinal direction demonstrated gain. These n-type GaN microwires were positioned mechanically or by dielectrophoretic force onto pre-patterned electrodes on a p-type Si (100) substrate. Electroluminescence from this p-n point junction was characteristic of a heterostructure light-emitting diode. Additionally, waveguiding was observed along the length of the microwire for light originating from photoluminescence as well as from electroluminescence generated at the p-n junction. (C)2011 Optical Society of America
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Collections - College of Engineering > Department of Chemical and Biological Engineering > 1. Journal Articles
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