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Large-area transparent conductive few-layer graphene electrode in GaN-based ultra-violet light-emitting diodes

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dc.contributor.authorKim, Byung-Jae-
dc.contributor.authorLee, Chongmin-
dc.contributor.authorJung, Younghun-
dc.contributor.authorBaik, Kwang Hyeon-
dc.contributor.authorMastro, Michael A.-
dc.contributor.authorHite, Jennifer K.-
dc.contributor.authorEddy, Charles R., Jr.-
dc.contributor.authorKim, Jihyun-
dc.date.accessioned2021-09-07T07:37:16Z-
dc.date.available2021-09-07T07:37:16Z-
dc.date.created2021-06-19-
dc.date.issued2011-10-03-
dc.identifier.issn0003-6951-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/111396-
dc.description.abstractWe report on the development of a large-area few-layer graphene (FLG)-based transparent conductive electrode as a current spreading layer for GaN-based ultraviolet (UV) light-emitting diodes (LEDs). Large-area FLG was deposited on Cu using the chemical vapor deposition (CVD) method and subsequently transferred to the surface of the UV LED. UV light at a peak of 372 nm was emitted through the FLG-based transparent conductive electrode. The current spreading effects of FLG were clearly evident in both the optical images of electroluminescence (EL) and current-voltage (I-V) characteristics. Degradation of the FLG-based transparent conductive electrode could be induced by high power operation. Our results indicate that a large-area FLG-based electrode on GaN offers excellent current spreading and ultra-violet transparency properties when compared to the standard optoelectronic indium tin oxide (ITO) contact layer. (C) 2011 American Institute of Physics. [doi:10.1063/1.3644496]-
dc.languageEnglish-
dc.language.isoen-
dc.publisherAMER INST PHYSICS-
dc.subjectSINGLE-LAYER-
dc.subjectFILMS-
dc.titleLarge-area transparent conductive few-layer graphene electrode in GaN-based ultra-violet light-emitting diodes-
dc.typeArticle-
dc.contributor.affiliatedAuthorKim, Jihyun-
dc.identifier.doi10.1063/1.3644496-
dc.identifier.scopusid2-s2.0-80053935159-
dc.identifier.wosid000295625100067-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.99, no.14-
dc.relation.isPartOfAPPLIED PHYSICS LETTERS-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume99-
dc.citation.number14-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusSINGLE-LAYER-
dc.subject.keywordPlusFILMS-
dc.subject.keywordAuthorchemical vapour deposition-
dc.subject.keywordAuthorelectroluminescence-
dc.subject.keywordAuthorgallium compounds-
dc.subject.keywordAuthorgraphene-
dc.subject.keywordAuthorIII-V semiconductors-
dc.subject.keywordAuthorlight emitting diodes-
dc.subject.keywordAuthortransparency-
dc.subject.keywordAuthorwide band gap semiconductors-
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