Large-area transparent conductive few-layer graphene electrode in GaN-based ultra-violet light-emitting diodes
DC Field | Value | Language |
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dc.contributor.author | Kim, Byung-Jae | - |
dc.contributor.author | Lee, Chongmin | - |
dc.contributor.author | Jung, Younghun | - |
dc.contributor.author | Baik, Kwang Hyeon | - |
dc.contributor.author | Mastro, Michael A. | - |
dc.contributor.author | Hite, Jennifer K. | - |
dc.contributor.author | Eddy, Charles R., Jr. | - |
dc.contributor.author | Kim, Jihyun | - |
dc.date.accessioned | 2021-09-07T07:37:16Z | - |
dc.date.available | 2021-09-07T07:37:16Z | - |
dc.date.created | 2021-06-19 | - |
dc.date.issued | 2011-10-03 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/111396 | - |
dc.description.abstract | We report on the development of a large-area few-layer graphene (FLG)-based transparent conductive electrode as a current spreading layer for GaN-based ultraviolet (UV) light-emitting diodes (LEDs). Large-area FLG was deposited on Cu using the chemical vapor deposition (CVD) method and subsequently transferred to the surface of the UV LED. UV light at a peak of 372 nm was emitted through the FLG-based transparent conductive electrode. The current spreading effects of FLG were clearly evident in both the optical images of electroluminescence (EL) and current-voltage (I-V) characteristics. Degradation of the FLG-based transparent conductive electrode could be induced by high power operation. Our results indicate that a large-area FLG-based electrode on GaN offers excellent current spreading and ultra-violet transparency properties when compared to the standard optoelectronic indium tin oxide (ITO) contact layer. (C) 2011 American Institute of Physics. [doi:10.1063/1.3644496] | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | SINGLE-LAYER | - |
dc.subject | FILMS | - |
dc.title | Large-area transparent conductive few-layer graphene electrode in GaN-based ultra-violet light-emitting diodes | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Jihyun | - |
dc.identifier.doi | 10.1063/1.3644496 | - |
dc.identifier.scopusid | 2-s2.0-80053935159 | - |
dc.identifier.wosid | 000295625100067 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.99, no.14 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 99 | - |
dc.citation.number | 14 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | SINGLE-LAYER | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordAuthor | chemical vapour deposition | - |
dc.subject.keywordAuthor | electroluminescence | - |
dc.subject.keywordAuthor | gallium compounds | - |
dc.subject.keywordAuthor | graphene | - |
dc.subject.keywordAuthor | III-V semiconductors | - |
dc.subject.keywordAuthor | light emitting diodes | - |
dc.subject.keywordAuthor | transparency | - |
dc.subject.keywordAuthor | wide band gap semiconductors | - |
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