Large-area transparent conductive few-layer graphene electrode in GaN-based ultra-violet light-emitting diodes
- Authors
- Kim, Byung-Jae; Lee, Chongmin; Jung, Younghun; Baik, Kwang Hyeon; Mastro, Michael A.; Hite, Jennifer K.; Eddy, Charles R., Jr.; Kim, Jihyun
- Issue Date
- 3-10월-2011
- Publisher
- AMER INST PHYSICS
- Keywords
- chemical vapour deposition; electroluminescence; gallium compounds; graphene; III-V semiconductors; light emitting diodes; transparency; wide band gap semiconductors
- Citation
- APPLIED PHYSICS LETTERS, v.99, no.14
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 99
- Number
- 14
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/111396
- DOI
- 10.1063/1.3644496
- ISSN
- 0003-6951
- Abstract
- We report on the development of a large-area few-layer graphene (FLG)-based transparent conductive electrode as a current spreading layer for GaN-based ultraviolet (UV) light-emitting diodes (LEDs). Large-area FLG was deposited on Cu using the chemical vapor deposition (CVD) method and subsequently transferred to the surface of the UV LED. UV light at a peak of 372 nm was emitted through the FLG-based transparent conductive electrode. The current spreading effects of FLG were clearly evident in both the optical images of electroluminescence (EL) and current-voltage (I-V) characteristics. Degradation of the FLG-based transparent conductive electrode could be induced by high power operation. Our results indicate that a large-area FLG-based electrode on GaN offers excellent current spreading and ultra-violet transparency properties when compared to the standard optoelectronic indium tin oxide (ITO) contact layer. (C) 2011 American Institute of Physics. [doi:10.1063/1.3644496]
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Collections - College of Engineering > Department of Chemical and Biological Engineering > 1. Journal Articles
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