Fabrication of oxide thin film transistor based on SOG dielectric and solution ZnO
DC Field | Value | Language |
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dc.contributor.author | Park, Jung Ho | - |
dc.contributor.author | Chang, Seongpil | - |
dc.contributor.author | Oh, Tae-Yeon | - |
dc.contributor.author | Choi, Bung-Hyun | - |
dc.contributor.author | Ji, Mi-Jung | - |
dc.contributor.author | Ju, Byeong-Kwon | - |
dc.date.accessioned | 2021-09-07T07:57:39Z | - |
dc.date.available | 2021-09-07T07:57:39Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2011-10 | - |
dc.identifier.issn | 1229-9162 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/111510 | - |
dc.description.abstract | ZnO TFTs use less vacuum processes. SiO2 as a dielectric layer was formed on a silicon and glass substrate using a spin on glass (SOG). On top of the SiO2 layer, ZnO thin films were spun using sol-gel method from an IPA solution of zinc acetate dehydrate stabilized by 2-aminoethanol. Thus, it was necessary to make the surface of the SiO2 hydrophilic coating process (ZnO layer) using RIE system. In the last process, sources and drain electrodes were made from N-type metal (Mo) using desputtering. In order to analyze the characteristics of the fabricated device, X-ray diffraction (XRD), scanning electron microscopy (SEM), Contact Angle analysis, and differential scanning calorimetry (DSC) & thermogravimetry (TG) were applied, and the current-voltage (I-V) characteristics of these TFTs were measured by semiconductor parameter analyzer characterization systems. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | KOREAN ASSOC CRYSTAL GROWTH, INC | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | HIGH-MOBILITY | - |
dc.title | Fabrication of oxide thin film transistor based on SOG dielectric and solution ZnO | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Ju, Byeong-Kwon | - |
dc.identifier.wosid | 000299861200016 | - |
dc.identifier.bibliographicCitation | JOURNAL OF CERAMIC PROCESSING RESEARCH, v.12, pp.S147 - S149 | - |
dc.relation.isPartOf | JOURNAL OF CERAMIC PROCESSING RESEARCH | - |
dc.citation.title | JOURNAL OF CERAMIC PROCESSING RESEARCH | - |
dc.citation.volume | 12 | - |
dc.citation.startPage | S147 | - |
dc.citation.endPage | S149 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Ceramics | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | HIGH-MOBILITY | - |
dc.subject.keywordAuthor | Oxide TFT | - |
dc.subject.keywordAuthor | Solution process | - |
dc.subject.keywordAuthor | SOG | - |
dc.subject.keywordAuthor | ZnO | - |
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