Fabrication of oxide thin film transistor based on SOG dielectric and solution ZnO

Abstract

ZnO TFTs use less vacuum processes. SiO2 as a dielectric layer was formed on a silicon and glass substrate using a spin on glass (SOG). On top of the SiO2 layer, ZnO thin films were spun using sol-gel method from an IPA solution of zinc acetate dehydrate stabilized by 2-aminoethanol. Thus, it was necessary to make the surface of the SiO2 hydrophilic coating process (ZnO layer) using RIE system. In the last process, sources and drain electrodes were made from N-type metal (Mo) using desputtering. In order to analyze the characteristics of the fabricated device, X-ray diffraction (XRD), scanning electron microscopy (SEM), Contact Angle analysis, and differential scanning calorimetry (DSC) & thermogravimetry (TG) were applied, and the current-voltage (I-V) characteristics of these TFTs were measured by semiconductor parameter analyzer characterization systems.