Stable Bipolar Resistive Switching Characteristics and Resistive Switching Mechanisms Observed in Aluminum Nitride-based ReRAM Devices
DC Field | Value | Language |
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dc.contributor.author | Kim, Hee-Dong | - |
dc.contributor.author | An, Ho-Myoung | - |
dc.contributor.author | Lee, Eui Bok | - |
dc.contributor.author | Kim, Tae Geun | - |
dc.date.accessioned | 2021-09-07T07:59:37Z | - |
dc.date.available | 2021-09-07T07:59:37Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2011-10 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/111520 | - |
dc.description.abstract | The authors report upon the ultrafast bipolar switching characteristics observed in aluminum nitride (AlN)-based resistive random access memory devices ReRAMs. The set and reset states were measured to be as low as 2 mu A and 5 nA, respectively, at V-read = 0.1 V. Regarding pulse operations, very fast switching characteristics were achieved at 3 V/10 ns for the set operation and -3 V/10 ns for the reset operation. In addition, the AlN-based ReRAMs showed an endurance value of over similar to 10(8) cycles and a retention time of over ten years at 85 degrees C. These results show that this AlN-based ReRAM can be used as a promising high-speed nonvolatile memory device. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | MEMORY | - |
dc.subject | LAYERS | - |
dc.title | Stable Bipolar Resistive Switching Characteristics and Resistive Switching Mechanisms Observed in Aluminum Nitride-based ReRAM Devices | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Geun | - |
dc.identifier.doi | 10.1109/TED.2011.2162518 | - |
dc.identifier.scopusid | 2-s2.0-80053195087 | - |
dc.identifier.wosid | 000295100300044 | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.58, no.10, pp.3566 - 3573 | - |
dc.relation.isPartOf | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.citation.title | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.citation.volume | 58 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 3566 | - |
dc.citation.endPage | 3573 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | MEMORY | - |
dc.subject.keywordPlus | LAYERS | - |
dc.subject.keywordAuthor | Atomic force microscopy (AFM) | - |
dc.subject.keywordAuthor | aluminum nitride (AlN) | - |
dc.subject.keywordAuthor | resistive switching (RS) | - |
dc.subject.keywordAuthor | space-charge-limited conduction (SCLC) | - |
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