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A 90-nm CMOS 144 GHz Injection Locked Frequency Divider with Inductive Feedback

Authors
Seo, HyogiSeo, SeungwooYun, JongwonRieh, Jae-Sung
Issue Date
9월-2011
Publisher
IEEK PUBLICATION CENTER
Keywords
Frequency divider; injection locked frequency divider; inductive feedback; LC oscillator; RF CMOS; THz
Citation
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.11, no.3, pp.190 - 197
Indexed
SCIE
SCOPUS
KCI
Journal Title
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
Volume
11
Number
3
Start Page
190
End Page
197
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/111735
DOI
10.5573/JSTS.2011.11.3.190
ISSN
1598-1657
Abstract
This paper presents a 144 GHz divide-by-2 injection locked frequency divider (ILFD) with inductive feedback developed in a commercial 90-nm Si RFCMOS technology. It was demonstrated that division-by-2 operation is achieved with input power down to -12 dBm, with measured locking range of 0.96 GHz (144.18 - 145.14 GHz) at input power of -3 dBm. To the authors' best knowledge, this is the highest operation frequency for ILFD based on a 90-nm CMOS technology. From supply voltage of 1.8 V, the circuit draws 5.7 mA including both core and buffer. The fabricated chip occupies 0.54 mm x 0.69 mm including the DC and RF pads.
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Rieh, Jae Sung
공과대학 (전기전자공학부)
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