Fabrication of multi-level switching phase change nano-pillar device using InSe/GeSbTe stacked structure
DC Field | Value | Language |
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dc.contributor.author | Hong, Sung-Hoon | - |
dc.contributor.author | Lee, Heon | - |
dc.contributor.author | Choi, Yunjung | - |
dc.contributor.author | Lee, Young-Kook | - |
dc.date.accessioned | 2021-09-07T09:07:51Z | - |
dc.date.available | 2021-09-07T09:07:51Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2011-09 | - |
dc.identifier.issn | 1567-1739 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/111751 | - |
dc.description.abstract | The InSe/GeSbTe stacked phase change materials were investigated at nano-scale for multi-level switching with a large sensing margin and fast switching. The 200 nm nano-pillar devices of InSe material and InSe/GeSbTe materials were fabricated using NIL, and its electrical properties were characterized using conducting AFM system, that was connected to a pulse generator and a voltage source. In case of InSe based nano-pillar device, it was evaluated that the fast switching speed (<100 ns) and large difference of resistance on-off ratio (>10,000) and exhibited only bi-level switching characteristics. In case of the InSe/GeSbTe PCMs structure exhibited three levels of resistance state with a few hundred times of difference between them with 100 ns reset pulse. (C) 2011 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | CHANGE MEMORY CELL | - |
dc.subject | DATA-STORAGE | - |
dc.subject | ALLOY | - |
dc.subject | FILMS | - |
dc.title | Fabrication of multi-level switching phase change nano-pillar device using InSe/GeSbTe stacked structure | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Heon | - |
dc.identifier.doi | 10.1016/j.cap.2011.06.018 | - |
dc.identifier.wosid | 000296969800005 | - |
dc.identifier.bibliographicCitation | CURRENT APPLIED PHYSICS, v.11, no.5, pp.S16 - S20 | - |
dc.relation.isPartOf | CURRENT APPLIED PHYSICS | - |
dc.citation.title | CURRENT APPLIED PHYSICS | - |
dc.citation.volume | 11 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | S16 | - |
dc.citation.endPage | S20 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | CHANGE MEMORY CELL | - |
dc.subject.keywordPlus | DATA-STORAGE | - |
dc.subject.keywordPlus | ALLOY | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordAuthor | Multi-level switching | - |
dc.subject.keywordAuthor | InSe/GeSbTe | - |
dc.subject.keywordAuthor | InSe | - |
dc.subject.keywordAuthor | Conductive AFM | - |
dc.subject.keywordAuthor | Nanoimprint lithography | - |
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