Fabrication of multi-level switching phase change nano-pillar device using InSe/GeSbTe stacked structure
- Authors
- Hong, Sung-Hoon; Lee, Heon; Choi, Yunjung; Lee, Young-Kook
- Issue Date
- 9월-2011
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- Multi-level switching; InSe/GeSbTe; InSe; Conductive AFM; Nanoimprint lithography
- Citation
- CURRENT APPLIED PHYSICS, v.11, no.5, pp.S16 - S20
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- CURRENT APPLIED PHYSICS
- Volume
- 11
- Number
- 5
- Start Page
- S16
- End Page
- S20
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/111751
- DOI
- 10.1016/j.cap.2011.06.018
- ISSN
- 1567-1739
- Abstract
- The InSe/GeSbTe stacked phase change materials were investigated at nano-scale for multi-level switching with a large sensing margin and fast switching. The 200 nm nano-pillar devices of InSe material and InSe/GeSbTe materials were fabricated using NIL, and its electrical properties were characterized using conducting AFM system, that was connected to a pulse generator and a voltage source. In case of InSe based nano-pillar device, it was evaluated that the fast switching speed (<100 ns) and large difference of resistance on-off ratio (>10,000) and exhibited only bi-level switching characteristics. In case of the InSe/GeSbTe PCMs structure exhibited three levels of resistance state with a few hundred times of difference between them with 100 ns reset pulse. (C) 2011 Elsevier B.V. All rights reserved.
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