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In Situ Observation of Voltage-Induced Multilevel Resistive Switching in Solid Electrolyte Memory

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dc.contributor.authorChoi, Sang-Jun-
dc.contributor.authorPark, Gyeong-Su-
dc.contributor.authorKim, Ki-Hong-
dc.contributor.authorCho, Soohaeng-
dc.contributor.authorYang, Woo-Young-
dc.contributor.authorLi, Xiang-Shu-
dc.contributor.authorMoon, Jung-Hwan-
dc.contributor.authorLee, Kyung-Jin-
dc.contributor.authorKim, Kinam-
dc.date.accessioned2021-09-07T09:40:30Z-
dc.date.available2021-09-07T09:40:30Z-
dc.date.created2021-06-19-
dc.date.issued2011-08-02-
dc.identifier.issn0935-9648-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/111814-
dc.description.abstractSolid electrolyte memories utilizing voltage-induced resistance change display the capability of multilevel switching, but understanding of the microscopic switching mechanism still is incomplete. Here, in situ TEM observations of voltage-induced changes in the microstructure of a solid electrolyte memory are reported, revealing that the multilevel switching originates from the growth of multiple conducting filaments with nanometer-sized diameter and spacing.-
dc.languageEnglish-
dc.language.isoen-
dc.publisherWILEY-V C H VERLAG GMBH-
dc.subjectRESISTANCE WINDOW-
dc.subjectDEVICE-
dc.subjectFILMS-
dc.titleIn Situ Observation of Voltage-Induced Multilevel Resistive Switching in Solid Electrolyte Memory-
dc.typeArticle-
dc.contributor.affiliatedAuthorLee, Kyung-Jin-
dc.identifier.doi10.1002/adma.201100507-
dc.identifier.scopusid2-s2.0-79960900595-
dc.identifier.wosid000294410000007-
dc.identifier.bibliographicCitationADVANCED MATERIALS, v.23, no.29, pp.3272 - +-
dc.relation.isPartOfADVANCED MATERIALS-
dc.citation.titleADVANCED MATERIALS-
dc.citation.volume23-
dc.citation.number29-
dc.citation.startPage3272-
dc.citation.endPage+-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryChemistry, Physical-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.subject.keywordPlusRESISTANCE WINDOW-
dc.subject.keywordPlusDEVICE-
dc.subject.keywordPlusFILMS-
dc.subject.keywordAuthorfilament model-
dc.subject.keywordAuthormutlilevel resistance state-
dc.subject.keywordAuthorRE-RAM-
dc.subject.keywordAuthorresistive switching effect-
dc.subject.keywordAuthorsolid electrolyte resistive switching memory-
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