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In Situ Observation of Voltage-Induced Multilevel Resistive Switching in Solid Electrolyte Memory

Authors
Choi, Sang-JunPark, Gyeong-SuKim, Ki-HongCho, SoohaengYang, Woo-YoungLi, Xiang-ShuMoon, Jung-HwanLee, Kyung-JinKim, Kinam
Issue Date
2-8월-2011
Publisher
WILEY-V C H VERLAG GMBH
Keywords
filament model; mutlilevel resistance state; RE-RAM; resistive switching effect; solid electrolyte resistive switching memory
Citation
ADVANCED MATERIALS, v.23, no.29, pp.3272 - +
Indexed
SCIE
SCOPUS
Journal Title
ADVANCED MATERIALS
Volume
23
Number
29
Start Page
3272
End Page
+
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/111814
DOI
10.1002/adma.201100507
ISSN
0935-9648
Abstract
Solid electrolyte memories utilizing voltage-induced resistance change display the capability of multilevel switching, but understanding of the microscopic switching mechanism still is incomplete. Here, in situ TEM observations of voltage-induced changes in the microstructure of a solid electrolyte memory are reported, revealing that the multilevel switching originates from the growth of multiple conducting filaments with nanometer-sized diameter and spacing.
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