Fabrication and Radio Frequency Characterization of Carbon Nanotube Field Effect Transistor: Evidence of Quantum Capacitance
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hwang, D. H. | - |
dc.contributor.author | Kang, M. G. | - |
dc.contributor.author | Kim, T. G. | - |
dc.contributor.author | Hwang, J. S. | - |
dc.contributor.author | Kim, D. W. | - |
dc.contributor.author | Whang, D. | - |
dc.contributor.author | Hwang, S. W. | - |
dc.date.accessioned | 2021-09-07T09:49:09Z | - |
dc.date.available | 2021-09-07T09:49:09Z | - |
dc.date.created | 2021-06-19 | - |
dc.date.issued | 2011-08 | - |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/111862 | - |
dc.description.abstract | We fabricated an radio frequency (RF) carbon nanotube field effect transistor (CNTFET) whose electrode shapes were standard RE designed ground-signal-ground (GSG)-type pads. The S-parameters measured from our RF CNTFET in the frequency range up to 6 GHz were fitted with an RF equivalent circuit, and the extracted gate capacitance was shown to be the capacitance value of the series combination of the electrostatic capacitance and the quantum capacitance. The effect of the channel resistance and the kinetic inductance was also discussed. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.subject | MODEL | - |
dc.title | Fabrication and Radio Frequency Characterization of Carbon Nanotube Field Effect Transistor: Evidence of Quantum Capacitance | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Hwang, J. S. | - |
dc.contributor.affiliatedAuthor | Hwang, S. W. | - |
dc.identifier.doi | 10.1166/jnn.2011.4834 | - |
dc.identifier.wosid | 000295296400101 | - |
dc.identifier.bibliographicCitation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.11, no.8, pp.7222 - 7225 | - |
dc.relation.isPartOf | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.title | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.volume | 11 | - |
dc.citation.number | 8 | - |
dc.citation.startPage | 7222 | - |
dc.citation.endPage | 7225 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | MODEL | - |
dc.subject.keywordAuthor | Carbon Nanotube | - |
dc.subject.keywordAuthor | Field-Effect Transistor | - |
dc.subject.keywordAuthor | Quantum Capacitance | - |
dc.subject.keywordAuthor | Microwave | - |
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