Fabrication and Radio Frequency Characterization of Carbon Nanotube Field Effect Transistor: Evidence of Quantum Capacitance
- Authors
- Hwang, D. H.; Kang, M. G.; Kim, T. G.; Hwang, J. S.; Kim, D. W.; Whang, D.; Hwang, S. W.
- Issue Date
- 8월-2011
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- Carbon Nanotube; Field-Effect Transistor; Quantum Capacitance; Microwave
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.11, no.8, pp.7222 - 7225
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 11
- Number
- 8
- Start Page
- 7222
- End Page
- 7225
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/111862
- DOI
- 10.1166/jnn.2011.4834
- ISSN
- 1533-4880
- Abstract
- We fabricated an radio frequency (RF) carbon nanotube field effect transistor (CNTFET) whose electrode shapes were standard RE designed ground-signal-ground (GSG)-type pads. The S-parameters measured from our RF CNTFET in the frequency range up to 6 GHz were fitted with an RF equivalent circuit, and the extracted gate capacitance was shown to be the capacitance value of the series combination of the electrostatic capacitance and the quantum capacitance. The effect of the channel resistance and the kinetic inductance was also discussed.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Engineering > School of Electrical Engineering > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.