Transparent Resistive Switching Memory Using ITO/AlN/ITO Capacitors

Abstract

This letter covers the fabrication of a transparent resistive random access memory (T-ReRAM) device using ITO/AlN/ITO capacitors and its observed resistive switching characteristics. This AlN-based T-ReRAM shows a transmittance above 80% (including the substrate) in the visible region and an excellent switching behavior under +/- 3 V/10 ns with a high-to-low resistance ratio greater than 10(2). In the reliability test, the device showed an endurance of > 10(8) cycles and a retention time of > 10(5) s at 85 degrees C. We believe that the AlN-based T-ReRAM presented in this letter could be a milestone for future see-through electronic devices.