Structural and Electrical Characteristics of Gallium Tin Oxide Thin Films Prepared by Electron Cyclotron Resonance-Metal Organic Chemical Vapor Deposition
DC Field | Value | Language |
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dc.contributor.author | Park, Ji Hun | - |
dc.contributor.author | Byun, Dongjin | - |
dc.contributor.author | Lee, Joong Kee | - |
dc.date.accessioned | 2021-09-07T10:01:56Z | - |
dc.date.available | 2021-09-07T10:01:56Z | - |
dc.date.created | 2021-06-19 | - |
dc.date.issued | 2011-08 | - |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/111932 | - |
dc.description.abstract | Gallium tin oxide composite (GTO) thin films were prepared by electron cyclotron resonance-metal organic chemical vapor deposition (ECR-MOCVD). The organometallics of tetramethlytin and trimethylgallium were used for precursors of gallium and tin, respectively. X-ray diffraction (XRD) characterization indicated that the gallium tin oxide composite thin films show the nano-polycrystalline of tetragonal rutile structure. Hall measurement indicated that the Ga/[O+Sn] mole ratio play an important role to determine the electrical properties of gallium tin composite oxide thin films. n-type conducting film obtained Ga/[O+Sn] mole ratio of 0.05 exhibited the lowest electrical resistivity of 1.21 x 10(-3) Omega.cm. In our experimental range, the optimized carrier concentration of 3.71 x 10(18) cm(-3) was prepared at the Ga/[O+Sn] mole ratio of 0.35. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.subject | CONDUCTION | - |
dc.title | Structural and Electrical Characteristics of Gallium Tin Oxide Thin Films Prepared by Electron Cyclotron Resonance-Metal Organic Chemical Vapor Deposition | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Byun, Dongjin | - |
dc.identifier.doi | 10.1166/jnn.2011.4840 | - |
dc.identifier.wosid | 000295296400104 | - |
dc.identifier.bibliographicCitation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.11, no.8, pp.7234 - 7237 | - |
dc.relation.isPartOf | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.title | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.volume | 11 | - |
dc.citation.number | 8 | - |
dc.citation.startPage | 7234 | - |
dc.citation.endPage | 7237 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | CONDUCTION | - |
dc.subject.keywordAuthor | ECR-MOCVD | - |
dc.subject.keywordAuthor | Gallium Tin Oxide | - |
dc.subject.keywordAuthor | Structural and Electrical Properties | - |
dc.subject.keywordAuthor | Texture Coefficient | - |
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