Structural and Electrical Characteristics of Gallium Tin Oxide Thin Films Prepared by Electron Cyclotron Resonance-Metal Organic Chemical Vapor Deposition
- Authors
- Park, Ji Hun; Byun, Dongjin; Lee, Joong Kee
- Issue Date
- 8월-2011
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- ECR-MOCVD; Gallium Tin Oxide; Structural and Electrical Properties; Texture Coefficient
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.11, no.8, pp.7234 - 7237
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 11
- Number
- 8
- Start Page
- 7234
- End Page
- 7237
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/111932
- DOI
- 10.1166/jnn.2011.4840
- ISSN
- 1533-4880
- Abstract
- Gallium tin oxide composite (GTO) thin films were prepared by electron cyclotron resonance-metal organic chemical vapor deposition (ECR-MOCVD). The organometallics of tetramethlytin and trimethylgallium were used for precursors of gallium and tin, respectively. X-ray diffraction (XRD) characterization indicated that the gallium tin oxide composite thin films show the nano-polycrystalline of tetragonal rutile structure. Hall measurement indicated that the Ga/[O+Sn] mole ratio play an important role to determine the electrical properties of gallium tin composite oxide thin films. n-type conducting film obtained Ga/[O+Sn] mole ratio of 0.05 exhibited the lowest electrical resistivity of 1.21 x 10(-3) Omega.cm. In our experimental range, the optimized carrier concentration of 3.71 x 10(18) cm(-3) was prepared at the Ga/[O+Sn] mole ratio of 0.35.
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Collections - College of Engineering > Department of Materials Science and Engineering > 1. Journal Articles
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