The study of the photo-response characteristics of organic photosensors integrated with pentacene based thin film transistors
- Authors
- Jeong, Shin Woo; Jeong, Jin Wook; Chang, Seongpil; Oh, Tae Yeon; Kang, Seung You; Cho, Kyoung Ik; Ju, Byeong-Kwon
- Issue Date
- 8월-2011
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Photo-response; Organic photo sensor; P3HT/PCBM; Organic thin film transistor; Flexible electronics
- Citation
- SENSORS AND ACTUATORS B-CHEMICAL, v.156, no.2, pp.657 - 661
- Indexed
- SCIE
SCOPUS
- Journal Title
- SENSORS AND ACTUATORS B-CHEMICAL
- Volume
- 156
- Number
- 2
- Start Page
- 657
- End Page
- 661
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/111939
- DOI
- 10.1016/j.snb.2011.02.013
- ISSN
- 0925-4005
- Abstract
- We have investigated the photo-response characteristics of organic photosensors (OPS) integrated with pentacene based thin film transistors (TFTs). The fabricated device configuration is PEN/ITO/PEDOT:PSS/(poly(3-hexylethiophene)/phenyl-C61-butryic acid methyl ester) (P3HT/PCBM)/Al and PDMS/Au/(poly-4-vinyphenol) (PVP)/pentacene/Au. In order to study the effect of the applied voltage to the pentacene-TFT on the OPS, each device is connected in series. The response current is tuned dependant on the gate-source voltage and the anode-source voltage. The change of the photo induced ON current in the integrated device is measured under light illuminations ranging from 50 mW/cm(2) to 500 mW/cm(2); the corresponding photo-response (Delta I/I-0) of the devices varied from 0.16 to 1.9. We found that the photo-response characteristic is high at the low anode-source voltage and high gate-source voltage. (C) 2011 Elsevier B.V. All rights reserved.
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