Electrical and optical characterization of GaN micro-wires
- Authors
- Jung, Younghun; Ahn, Jaehui; Mastro, Michael A.; Hite, Jennifer K.; Feigelson, Boris; Eddy, Charles R., Jr.; Kim, Jihyun
- Issue Date
- 1-7월-2011
- Publisher
- ELSEVIER
- Keywords
- Etching; Nanostructues; Nitrides; Semiconducting gallium compounds
- Citation
- JOURNAL OF CRYSTAL GROWTH, v.326, no.1, pp.81 - 84
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF CRYSTAL GROWTH
- Volume
- 326
- Number
- 1
- Start Page
- 81
- End Page
- 84
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/112028
- DOI
- 10.1016/j.jcrysgro.2011.01.057
- ISSN
- 0022-0248
- Abstract
- A near atmospheric pressure solution growth process was developed to produce an abundant quantity of GaN micro-wires in the c-direction with a length of tens of microns and a diameter of approximately 1-10 mu m. Raman analysis showed that the micro-wires were free of stress which was expected for a free-forming crystal. The lack of stress and extended defects in the GaN micro-wire provided a useful test-bed to directly compare the wet-etch behavior of the polar c-planes and non-polar m-planes in GaN. The etch behavior at the end of the micro-wire (+/- c) was dramatically different, with the (0 0 0 1) plane found to be stable and the (0 0 0 -1) plane observed to rapidly etch into nanoscale hexagonal pyramids. Additionally a dielectrophoretic method was employed to readily align the wires as part of a larger device processing sequence. (C) 2011 Elsevier B.V. All rights reserved.
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