Wet etching of non-polar gallium nitride light-emitting diode structure for enhanced light extraction
DC Field | Value | Language |
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dc.contributor.author | Kim, Hong-Yeol | - |
dc.contributor.author | Jung, Younghun | - |
dc.contributor.author | Kim, Sung Hyun | - |
dc.contributor.author | Ahn, Jaehui | - |
dc.contributor.author | Mastro, Michael A. | - |
dc.contributor.author | Hite, Jennifer K. | - |
dc.contributor.author | Eddy, Charles R., Jr. | - |
dc.contributor.author | Kim, Jihyun | - |
dc.date.accessioned | 2021-09-07T10:50:59Z | - |
dc.date.available | 2021-09-07T10:50:59Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2011-07-01 | - |
dc.identifier.issn | 0022-0248 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/112030 | - |
dc.description.abstract | The surface of a non-polar a-plane GaN light-emitting diode (LED) was intentionally damaged with a KOH wet etch to enhance the extraction of light. This roughening technique has been commonly applied to c-plane polar GaN LEDs to extract photons that would otherwise suffer from total internal refraction. We show that wet etching of the non-polar LED does create a textured surface that increases the light extraction efficiency; however, the mechanism of the etch is quite dissimilar to the etch mechanism observed for c-plane LEDs. In fact, the etch proceeds perpendicular to the a-plane surface along unstable N-face (0 0 0 -1) plane with the Ga-face plane resistant to the etch. The photoluminescence intensity from a-plane non-polar LED after KOH-based wet etching was increased by 83% in our experiments. Therefore, surface roughening by KOH-based wet etch was found to be very effective to extract photons from a-plane non-polar GaN-based LEDs. (C) 2011 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER | - |
dc.subject | 2-DIMENSIONAL PHOTONIC CRYSTAL | - |
dc.subject | GAN | - |
dc.title | Wet etching of non-polar gallium nitride light-emitting diode structure for enhanced light extraction | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Sung Hyun | - |
dc.contributor.affiliatedAuthor | Kim, Jihyun | - |
dc.identifier.doi | 10.1016/j.jcrysgro.2011.01.053 | - |
dc.identifier.wosid | 000293483800015 | - |
dc.identifier.bibliographicCitation | JOURNAL OF CRYSTAL GROWTH, v.326, no.1, pp.65 - 68 | - |
dc.relation.isPartOf | JOURNAL OF CRYSTAL GROWTH | - |
dc.citation.title | JOURNAL OF CRYSTAL GROWTH | - |
dc.citation.volume | 326 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 65 | - |
dc.citation.endPage | 68 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Crystallography | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Crystallography | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | 2-DIMENSIONAL PHOTONIC CRYSTAL | - |
dc.subject.keywordPlus | GAN | - |
dc.subject.keywordAuthor | Gallium compounds | - |
dc.subject.keywordAuthor | Light-emitting diodes | - |
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