Wet etching of non-polar gallium nitride light-emitting diode structure for enhanced light extraction
- Authors
- Kim, Hong-Yeol; Jung, Younghun; Kim, Sung Hyun; Ahn, Jaehui; Mastro, Michael A.; Hite, Jennifer K.; Eddy, Charles R., Jr.; Kim, Jihyun
- Issue Date
- 1-7월-2011
- Publisher
- ELSEVIER
- Keywords
- Gallium compounds; Light-emitting diodes
- Citation
- JOURNAL OF CRYSTAL GROWTH, v.326, no.1, pp.65 - 68
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF CRYSTAL GROWTH
- Volume
- 326
- Number
- 1
- Start Page
- 65
- End Page
- 68
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/112030
- DOI
- 10.1016/j.jcrysgro.2011.01.053
- ISSN
- 0022-0248
- Abstract
- The surface of a non-polar a-plane GaN light-emitting diode (LED) was intentionally damaged with a KOH wet etch to enhance the extraction of light. This roughening technique has been commonly applied to c-plane polar GaN LEDs to extract photons that would otherwise suffer from total internal refraction. We show that wet etching of the non-polar LED does create a textured surface that increases the light extraction efficiency; however, the mechanism of the etch is quite dissimilar to the etch mechanism observed for c-plane LEDs. In fact, the etch proceeds perpendicular to the a-plane surface along unstable N-face (0 0 0 -1) plane with the Ga-face plane resistant to the etch. The photoluminescence intensity from a-plane non-polar LED after KOH-based wet etching was increased by 83% in our experiments. Therefore, surface roughening by KOH-based wet etch was found to be very effective to extract photons from a-plane non-polar GaN-based LEDs. (C) 2011 Elsevier B.V. All rights reserved.
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