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Investigation of weak interlayer exchange coupling in GaMnAs/GaAs superlattices with insulating nonmagnetic spacers

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dc.contributor.authorChung, Jae-Ho-
dc.contributor.authorSong, Young-Sang-
dc.contributor.authorYoo, Taehee-
dc.contributor.authorChung, Sun Jae-
dc.contributor.authorLee, Sanghoon-
dc.contributor.authorKirby, B. J.-
dc.contributor.authorLiu, X.-
dc.contributor.authorFurdyna, J. K.-
dc.date.accessioned2021-09-07T10:51:11Z-
dc.date.available2021-09-07T10:51:11Z-
dc.date.created2021-06-14-
dc.date.issued2011-07-01-
dc.identifier.issn0021-8979-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/112031-
dc.description.abstractA robust long-range antiferromagnetic coupling between ferromagnetic Ga(0.97)Mn(0.03)As layers has previously been realized via insertion of nonmagnetic Be-doped GaAs spacers between the magnetic layers. In this paper we report the observation of weak antiferromagnetic coupling between Ga(0.97)Mn(0.03)As layers through undoped GaAs spacers with thicknesses as large as 25 monolayers. The field and the temperature dependences of the sample magnetization suggest that the interlayer coupling in these systems substantially deviates from typical ferromagnetic behavior. Polarized neutron reflectivity measurements reveal antiferromagnetic alignment between Ga(0.97)Mn(0.03)As layers when a weak field is applied perpendicular to the magnetic easy axis during cooling below T(C). The strength of the observed coupling between the magnetic layers is estimated to be weaker than 0.05 mT. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3609080]-
dc.languageEnglish-
dc.language.isoen-
dc.publisherAMER INST PHYSICS-
dc.subjectFERROMAGNETIC SEMICONDUCTOR SUPERLATTICES-
dc.subjectLAYERED MAGNETIC-STRUCTURES-
dc.subjectPOLARIZED NEUTRON REFLECTOMETRY-
dc.subjectMAGNETORESISTANCE-
dc.subjectMULTILAYERS-
dc.titleInvestigation of weak interlayer exchange coupling in GaMnAs/GaAs superlattices with insulating nonmagnetic spacers-
dc.typeArticle-
dc.contributor.affiliatedAuthorChung, Jae-Ho-
dc.contributor.affiliatedAuthorLee, Sanghoon-
dc.identifier.doi10.1063/1.3609080-
dc.identifier.scopusid2-s2.0-79960500985-
dc.identifier.wosid000292776500084-
dc.identifier.bibliographicCitationJOURNAL OF APPLIED PHYSICS, v.110, no.1-
dc.relation.isPartOfJOURNAL OF APPLIED PHYSICS-
dc.citation.titleJOURNAL OF APPLIED PHYSICS-
dc.citation.volume110-
dc.citation.number1-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusFERROMAGNETIC SEMICONDUCTOR SUPERLATTICES-
dc.subject.keywordPlusLAYERED MAGNETIC-STRUCTURES-
dc.subject.keywordPlusPOLARIZED NEUTRON REFLECTOMETRY-
dc.subject.keywordPlusMAGNETORESISTANCE-
dc.subject.keywordPlusMULTILAYERS-
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