Characterization of a-plane GaN layers grown on patterned r-sapphire substrate by metal organic chemical vapor deposition
DC Field | Value | Language |
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dc.contributor.author | Yoo, Geunho | - |
dc.contributor.author | Park, Hyunsung | - |
dc.contributor.author | Lee, Donghun | - |
dc.contributor.author | Lim, Hyoungjin | - |
dc.contributor.author | Lee, Seunga | - |
dc.contributor.author | Kong, Bohyun | - |
dc.contributor.author | Cho, Hyungkoun | - |
dc.contributor.author | Park, Hyoungwon | - |
dc.contributor.author | Lee, Heon | - |
dc.contributor.author | Nam, Okhyun | - |
dc.date.accessioned | 2021-09-07T10:56:07Z | - |
dc.date.available | 2021-09-07T10:56:07Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2011-07 | - |
dc.identifier.issn | 1567-1739 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/112058 | - |
dc.description.abstract | Non-polar a-plane GaN layers were grown on planar and hemispherical micro-and nano-patterned r-sapphire substrates (PSS) by metal organic chemical vapor deposition (MOCVD). Double Crystal X-ray Rocking Curve (DCXRC) and Transmission Electron Microscopy (TEM) analyses showed that the crystal quality of a-GaN grown on the micro-PSS was the best among three kinds of r-sapphire substrates, which was attributed to defect reduction through lateral overgrowth on the hemispherical patterns. The intensity of the near band-edge emission (NBE) at 3.4eV from a-GaN on the micro-PSS was increased by about 30 times compared with that of the conventional a-plane GaN on planar r-sapphire, while the yellow emission spectrum at 2.2eV was the lowest among the three samples. Comparison of the micro-photoluminescence mapping image and the cross-section TEM also showed high and low defect regions on the planar section and hemisphere, respectively. (C) 2011 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER | - |
dc.subject | LIGHT-EMITTING-DIODES | - |
dc.subject | NITRIDE | - |
dc.title | Characterization of a-plane GaN layers grown on patterned r-sapphire substrate by metal organic chemical vapor deposition | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Heon | - |
dc.identifier.doi | 10.1016/j.cap.2011.03.078 | - |
dc.identifier.wosid | 000296726300023 | - |
dc.identifier.bibliographicCitation | CURRENT APPLIED PHYSICS, v.11, no.4, pp.S90 - S94 | - |
dc.relation.isPartOf | CURRENT APPLIED PHYSICS | - |
dc.citation.title | CURRENT APPLIED PHYSICS | - |
dc.citation.volume | 11 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | S90 | - |
dc.citation.endPage | S94 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | LIGHT-EMITTING-DIODES | - |
dc.subject.keywordPlus | NITRIDE | - |
dc.subject.keywordAuthor | Non-polar GaN | - |
dc.subject.keywordAuthor | PSS | - |
dc.subject.keywordAuthor | Defect reduction | - |
dc.subject.keywordAuthor | InGaN | - |
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