Characterization of a-plane GaN layers grown on patterned r-sapphire substrate by metal organic chemical vapor deposition
- Authors
- Yoo, Geunho; Park, Hyunsung; Lee, Donghun; Lim, Hyoungjin; Lee, Seunga; Kong, Bohyun; Cho, Hyungkoun; Park, Hyoungwon; Lee, Heon; Nam, Okhyun
- Issue Date
- 7월-2011
- Publisher
- ELSEVIER
- Keywords
- Non-polar GaN; PSS; Defect reduction; InGaN
- Citation
- CURRENT APPLIED PHYSICS, v.11, no.4, pp.S90 - S94
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- CURRENT APPLIED PHYSICS
- Volume
- 11
- Number
- 4
- Start Page
- S90
- End Page
- S94
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/112058
- DOI
- 10.1016/j.cap.2011.03.078
- ISSN
- 1567-1739
- Abstract
- Non-polar a-plane GaN layers were grown on planar and hemispherical micro-and nano-patterned r-sapphire substrates (PSS) by metal organic chemical vapor deposition (MOCVD). Double Crystal X-ray Rocking Curve (DCXRC) and Transmission Electron Microscopy (TEM) analyses showed that the crystal quality of a-GaN grown on the micro-PSS was the best among three kinds of r-sapphire substrates, which was attributed to defect reduction through lateral overgrowth on the hemispherical patterns. The intensity of the near band-edge emission (NBE) at 3.4eV from a-GaN on the micro-PSS was increased by about 30 times compared with that of the conventional a-plane GaN on planar r-sapphire, while the yellow emission spectrum at 2.2eV was the lowest among the three samples. Comparison of the micro-photoluminescence mapping image and the cross-section TEM also showed high and low defect regions on the planar section and hemisphere, respectively. (C) 2011 Elsevier B.V. All rights reserved.
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