Estimation of Interfacial Fixed Charge at Al2O3/SiO2 Using Slant-Etched Wafer for Solar Cell Application
DC Field | Value | Language |
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dc.contributor.author | Ahn, Youngkyoung | - |
dc.contributor.author | Choudhury, Sakeb Hasan | - |
dc.contributor.author | Lee, Daeseok | - |
dc.contributor.author | Sadaf, Sharif Md. | - |
dc.contributor.author | Siddik, Manzar | - |
dc.contributor.author | Jo, Minseok | - |
dc.contributor.author | Park, Sungeun | - |
dc.contributor.author | Kim, Young Do | - |
dc.contributor.author | Kim, Dong Hwan | - |
dc.contributor.author | Hwang, Hyunsang | - |
dc.date.accessioned | 2021-09-07T10:57:46Z | - |
dc.date.available | 2021-09-07T10:57:46Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2011-07 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/112067 | - |
dc.description.abstract | Al2O3 with a negative fixed charge prepared by atomic layer deposition has been reported to improve surface passivation properties for Si-solar cell applications. The high negative fixed charge at the SiO2/Al2O3 interface facilitates a low surface recombination velocity and a high effective lifetime, which result in greater performance. In this study, we adopted an effective method using a slant-etched sample with various thicknesses of SiO2 to estimate the charge densities of both the bulk and interface of Al2O3 deposited by atomic layer deposition. We found a direct correlation between lifetime and total charge density in Al2O3, which are strong functions of film thickness and annealing condition. (C) 2011 The Japan Society of Applied Physics | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | SILICON SURFACE PASSIVATION | - |
dc.subject | DEPOSITION | - |
dc.subject | RECOMBINATION | - |
dc.subject | FILMS | - |
dc.subject | SI | - |
dc.title | Estimation of Interfacial Fixed Charge at Al2O3/SiO2 Using Slant-Etched Wafer for Solar Cell Application | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Dong Hwan | - |
dc.identifier.doi | 10.1143/JJAP.50.071503 | - |
dc.identifier.scopusid | 2-s2.0-79960696282 | - |
dc.identifier.wosid | 000292878200041 | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.50, no.7 | - |
dc.relation.isPartOf | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 50 | - |
dc.citation.number | 7 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | SILICON SURFACE PASSIVATION | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.subject.keywordPlus | RECOMBINATION | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | SI | - |
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