Estimation of Interfacial Fixed Charge at Al2O3/SiO2 Using Slant-Etched Wafer for Solar Cell Application
- Authors
- Ahn, Youngkyoung; Choudhury, Sakeb Hasan; Lee, Daeseok; Sadaf, Sharif Md.; Siddik, Manzar; Jo, Minseok; Park, Sungeun; Kim, Young Do; Kim, Dong Hwan; Hwang, Hyunsang
- Issue Date
- 7월-2011
- Publisher
- IOP PUBLISHING LTD
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, v.50, no.7
- Indexed
- SCIE
SCOPUS
- Journal Title
- JAPANESE JOURNAL OF APPLIED PHYSICS
- Volume
- 50
- Number
- 7
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/112067
- DOI
- 10.1143/JJAP.50.071503
- ISSN
- 0021-4922
- Abstract
- Al2O3 with a negative fixed charge prepared by atomic layer deposition has been reported to improve surface passivation properties for Si-solar cell applications. The high negative fixed charge at the SiO2/Al2O3 interface facilitates a low surface recombination velocity and a high effective lifetime, which result in greater performance. In this study, we adopted an effective method using a slant-etched sample with various thicknesses of SiO2 to estimate the charge densities of both the bulk and interface of Al2O3 deposited by atomic layer deposition. We found a direct correlation between lifetime and total charge density in Al2O3, which are strong functions of film thickness and annealing condition. (C) 2011 The Japan Society of Applied Physics
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Engineering > Department of Materials Science and Engineering > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.