Investigation on Light Emission in Light-Emitting Diodes Constructed with n-ZnO and p-Si Nanowires
- Authors
- Kim, Kwangeun; Moon, Taeho; Kim, Sangsig
- Issue Date
- 7월-2011
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- Light-Emitting Diode; ZnO; Si; Nanowire
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.11, no.7, pp.6025 - 6028
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 11
- Number
- 7
- Start Page
- 6025
- End Page
- 6028
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/112095
- DOI
- 10.1166/jnn.2011.4345
- ISSN
- 1533-4880
- Abstract
- The light emission was investigated in light-emitting diodes (LEDs) constructed with n-ZnO and p-Si nanowires (NWs). ZnO NWs were synthesized by thermal chemical vapor deposition and Si NWs were formed by crystallographic wet etching of a Si wafer. The LEDs were fabricated using the NWs via dielectrophoresis (DEP) and direct transfer methods. The DEP method enabled to align the ZnO NW at the position that led to p-n heterojunction diodes by crossing with the transferred Si NW. The I-V curve of the p-n heterojunction diode showed the well-defined current-rectifying characteristic, with a turn-on voltage of 3 V. The electroluminescence spectrum in the dark showed the strong emission at similar to 385 nm and the broad emission centered at similar to 510 nm, at a forward bias of 30 V. Under the illumination of 325-nm-wavelength light, the luminescence intensity at 385 nm was dramatically enhanced, compared to that in the dark, probably due to the electric-field-induced enhancement of luminescence.
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