Analysis of Etching Mechanism and Etched Slope Control of Silicon for Nanoimprinting Lithography
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ham, Y. -H. | - |
dc.contributor.author | Kim, Y. | - |
dc.contributor.author | Baek, K. -H. | - |
dc.contributor.author | Do, L. M. | - |
dc.contributor.author | Kwon, K. -H. | - |
dc.contributor.author | Park, K. -B. | - |
dc.date.accessioned | 2021-09-07T11:12:56Z | - |
dc.date.available | 2021-09-07T11:12:56Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2011-07 | - |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/112152 | - |
dc.description.abstract | In the nanoimprint lithography (NIL) process, profile control of imprint masters is a very important task. Therefore, we attempted to control the etched slope of imprint masters as a function of adding O(2) to CF(4) plasma. Etched profile mechanisms and relationships between the etch kinetics and plasma chemistry were explored using zero-dimensional-based modeling. O(2) flow rate increased to 24 sccm, the Si etch rate increased in the range of 186-393 nm/min, while the etch rate rapidly decreased as the O(2) flow rate increases beyond 24 sccm. Meanwhile, change in the etch rate of SiO(2) followed a similar tendency as the etch rate of Si as a function of O(2) flow rate in the CF(4)/O(2) mixing gases. The Si and SiO(2) etch rate were expected to be closely dependent on the F radical intensity in CF(4)/O(2) mixing gases. Moreover, the results of simulated normalized lateral etch critical dimension (NLECD) are in agreement with the measured NLECD as a function of O(2) flow rate in the CF(4)/O(2) mixing gases. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.subject | FEATURE PROFILE EVOLUTION | - |
dc.subject | HYDROGEN SILSESQUIOXANE | - |
dc.subject | IMPRINT LITHOGRAPHY | - |
dc.subject | SF6/O-2 PLASMA | - |
dc.subject | THIN-FILMS | - |
dc.subject | FABRICATION | - |
dc.subject | NITRIDE | - |
dc.subject | FLASH | - |
dc.subject | STEP | - |
dc.title | Analysis of Etching Mechanism and Etched Slope Control of Silicon for Nanoimprinting Lithography | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kwon, K. -H. | - |
dc.contributor.affiliatedAuthor | Park, K. -B. | - |
dc.identifier.doi | 10.1166/jnn.2011.4357 | - |
dc.identifier.wosid | 000293663200174 | - |
dc.identifier.bibliographicCitation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.11, no.7, pp.6523 - 6527 | - |
dc.relation.isPartOf | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.title | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.volume | 11 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | 6523 | - |
dc.citation.endPage | 6527 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | FEATURE PROFILE EVOLUTION | - |
dc.subject.keywordPlus | HYDROGEN SILSESQUIOXANE | - |
dc.subject.keywordPlus | IMPRINT LITHOGRAPHY | - |
dc.subject.keywordPlus | SF6/O-2 PLASMA | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | NITRIDE | - |
dc.subject.keywordPlus | FLASH | - |
dc.subject.keywordPlus | STEP | - |
dc.subject.keywordAuthor | Nanoimprint | - |
dc.subject.keywordAuthor | Etch Mechanism | - |
dc.subject.keywordAuthor | Etched Profile | - |
dc.subject.keywordAuthor | Silicon Master | - |
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