Defect levels of semi-insulating CdMnTe:In crystals
DC Field | Value | Language |
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dc.contributor.author | Kim, K. H. | - |
dc.contributor.author | Bolotinikov, A. E. | - |
dc.contributor.author | Camarda, G. S. | - |
dc.contributor.author | Hossain, A. | - |
dc.contributor.author | Gul, R. | - |
dc.contributor.author | Yang, G. | - |
dc.contributor.author | Cui, Y. | - |
dc.contributor.author | Prochazka, J. | - |
dc.contributor.author | Franc, J. | - |
dc.contributor.author | Hong, J. | - |
dc.contributor.author | James, R. B. | - |
dc.date.accessioned | 2021-09-07T11:41:40Z | - |
dc.date.available | 2021-09-07T11:41:40Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2011-06-01 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/112254 | - |
dc.description.abstract | Using photoluminescence (PL) and current deep-level transient spectroscopy (I-DLTS), we investigated the electronic defects of indium-doped detector-grade CdMnTe:In (CMT:In) crystals grown by the vertical Bridgman method. We similarly analyzed CdZnTe:In (CZT:In) and undoped CdMnTe (CMT) crystals grown under the amount of same level of excess Te and/or indium doping level to detail the fundamental properties of the electronic defect structure more readily. Extended defects, existing in all the samples, were revealed by synchrotron white beam x-ray diffraction topography and scanning electron microscopy. The electronic structure of CMT is very similar to that of CZT, with shallow traps, A-centers, Cd vacancies, deep levels, and Te antisites. The 1.1-eV deep level, revealed by PL in earlier studies of CZT and CdTe, were attributed to dislocation-induced defects. In our I-DLTS measurements, the 1.1-eV traps showed different activation energies with applied bias voltage and an exponential dependence on the trap-filling time, which are typical characteristics of dislocation-induced defects. We propose a new defect-trap model for indium-doped CMT crystals. (C) 2011 American Institute of Physics. [doi:10.1063/1.3594715] | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | POINT-DEFECTS | - |
dc.subject | DISLOCATIONS | - |
dc.title | Defect levels of semi-insulating CdMnTe:In crystals | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, K. H. | - |
dc.contributor.affiliatedAuthor | Hong, J. | - |
dc.identifier.doi | 10.1063/1.3594715 | - |
dc.identifier.scopusid | 2-s2.0-79959426364 | - |
dc.identifier.wosid | 000292214700077 | - |
dc.identifier.bibliographicCitation | JOURNAL OF APPLIED PHYSICS, v.109, no.11 | - |
dc.relation.isPartOf | JOURNAL OF APPLIED PHYSICS | - |
dc.citation.title | JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 109 | - |
dc.citation.number | 11 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | POINT-DEFECTS | - |
dc.subject.keywordPlus | DISLOCATIONS | - |
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