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High yield production of semiconducting p-type single-walled carbon nanotube thin-film transistors on a flexible polyimide substrate by tuning the density of ferritin catalysts

Authors
Park, JaehyunYoon, JangyeolKang, Seong JunKim, Gyu-TaeHa, Jeong Sook
Issue Date
6월-2011
Publisher
PERGAMON-ELSEVIER SCIENCE LTD
Citation
CARBON, v.49, no.7, pp.2492 - 2498
Indexed
SCIE
SCOPUS
Journal Title
CARBON
Volume
49
Number
7
Start Page
2492
End Page
2498
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/112370
DOI
10.1016/j.carbon.2011.02.019
ISSN
0008-6223
Abstract
We report on a simple method for fabricating pure p-type single-walled carbon nanotube (SWCNT) thin-film transistors (TFTs) on flexible polyimide substrates without selective removal of metallic SWCNTs from the as-grown CNT films. The density of the SWCNTs was controlled by tuning the concentration of ferritin catalyst, resulting in the control of the metallic percolation pathways in the SWCNT TFTs. For a ferritin solution diluted by 112000, approximately 60% of the pristine SWCNT TFTs showed p-type behavior with larger on/off current ratios, (I-on/I-off > 10(4)) and a high photosensitivity to the exposure of UV/visible light. (C) 2011 Elsevier Ltd. All rights reserved.
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공과대학 (화공생명공학과)
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