Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
A Comprehensive Study of High-Q Island-Gate Varactors (IGVs) for CMOS Millimeter-Wave Applications
- Authors
- Oh, Yongho; Rieh, Jae-Sung
- Issue Date
- 6월-2011
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Millimeter wave; Q factor; varactors
- Citation
- IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, v.59, no.6, pp.1520 - 1528
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
- Volume
- 59
- Number
- 6
- Start Page
- 1520
- End Page
- 1528
- ISSN
- 0018-9480
- Abstract
- This paper presents a comprehensive study on the high-Q island-gate varactor (IGV), which includes a comparison with the conventional multifinger varactors (MFVs) and analyses on the effect of structural variations on the varactor performance. The study shows that the IGV exhibits smaller R(s) and larger Q factor compared to the MFV, while its capacitance tuning ratio is smaller. The effect of the dimension variation and shape of the gate island, as well as the gate thickness, is substantial and the observed trends can be exploited for IGV optimization. This work indicates that the IGV is a highly promising option for millimeter-wave applications.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Engineering > School of Electrical Engineering > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.