Deoxyribonucleic Acid Sensitive Graphene Field-Effect Transistors
DC Field | Value | Language |
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dc.contributor.author | Hwang, Jongseung | - |
dc.contributor.author | Kim, Heetae | - |
dc.contributor.author | Lee, Jaehyun | - |
dc.contributor.author | Whang, Dongmok | - |
dc.contributor.author | Hwang, Sungwoo | - |
dc.date.accessioned | 2021-09-07T12:37:47Z | - |
dc.date.available | 2021-09-07T12:37:47Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2011-05 | - |
dc.identifier.issn | 1745-1353 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/112488 | - |
dc.description.abstract | We have investigated the effect of deoxyribonucleic acid (DNA) adsorption on a graphene field-effect-transistor (FET) device. We have used graphene which is grown on a Ni substrate by chemical vapour deposition. The Raman spectra of our graphene indicate its high quality, and also show that it consists of only a few layers. The current-voltage characteristics of our bare graphene strip FET show a hole conduction behavior, and the gate sensitivity of 0.0034 mu A/V, which is reasonable with the size of the strip (5 x 10 mu m(2)). After the adsorption of 30 base pairs single-stranded poly (dT) DNA molecules, the conductance and gate operation of the graphene FET exhibit almost 11% and 18% decrease from those of the bare graphene FET device. The observed change may suggest a large sensitivity for a small enough (nm size) graphene strip with larger semiconducting property. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG | - |
dc.subject | EPITAXIAL GRAPHENE | - |
dc.subject | DNA | - |
dc.title | Deoxyribonucleic Acid Sensitive Graphene Field-Effect Transistors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Hwang, Jongseung | - |
dc.contributor.affiliatedAuthor | Hwang, Sungwoo | - |
dc.identifier.doi | 10.1587/transele.E94.C.826 | - |
dc.identifier.scopusid | 2-s2.0-79955636204 | - |
dc.identifier.wosid | 000292618900027 | - |
dc.identifier.bibliographicCitation | IEICE TRANSACTIONS ON ELECTRONICS, v.E94C, no.5, pp.826 - 829 | - |
dc.relation.isPartOf | IEICE TRANSACTIONS ON ELECTRONICS | - |
dc.citation.title | IEICE TRANSACTIONS ON ELECTRONICS | - |
dc.citation.volume | E94C | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 826 | - |
dc.citation.endPage | 829 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordPlus | EPITAXIAL GRAPHENE | - |
dc.subject.keywordPlus | DNA | - |
dc.subject.keywordAuthor | graphene | - |
dc.subject.keywordAuthor | chemical vapour deposition | - |
dc.subject.keywordAuthor | transport | - |
dc.subject.keywordAuthor | field-effect transistor | - |
dc.subject.keywordAuthor | DNA | - |
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