Deoxyribonucleic Acid Sensitive Graphene Field-Effect Transistors
- Authors
- Hwang, Jongseung; Kim, Heetae; Lee, Jaehyun; Whang, Dongmok; Hwang, Sungwoo
- Issue Date
- 5월-2011
- Publisher
- IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG
- Keywords
- graphene; chemical vapour deposition; transport; field-effect transistor; DNA
- Citation
- IEICE TRANSACTIONS ON ELECTRONICS, v.E94C, no.5, pp.826 - 829
- Indexed
- SCOPUS
- Journal Title
- IEICE TRANSACTIONS ON ELECTRONICS
- Volume
- E94C
- Number
- 5
- Start Page
- 826
- End Page
- 829
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/112488
- DOI
- 10.1587/transele.E94.C.826
- ISSN
- 1745-1353
- Abstract
- We have investigated the effect of deoxyribonucleic acid (DNA) adsorption on a graphene field-effect-transistor (FET) device. We have used graphene which is grown on a Ni substrate by chemical vapour deposition. The Raman spectra of our graphene indicate its high quality, and also show that it consists of only a few layers. The current-voltage characteristics of our bare graphene strip FET show a hole conduction behavior, and the gate sensitivity of 0.0034 mu A/V, which is reasonable with the size of the strip (5 x 10 mu m(2)). After the adsorption of 30 base pairs single-stranded poly (dT) DNA molecules, the conductance and gate operation of the graphene FET exhibit almost 11% and 18% decrease from those of the bare graphene FET device. The observed change may suggest a large sensitivity for a small enough (nm size) graphene strip with larger semiconducting property.
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