Study on wet patterning of thin films in vertical-transfer wet station for thin-film-transistor manufacturing
DC Field | Value | Language |
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dc.contributor.author | Lee, Sang-Hyuk | - |
dc.contributor.author | Park, In-Sun | - |
dc.contributor.author | Choe, HeeHwan | - |
dc.contributor.author | Hong, Mun-Pyo | - |
dc.contributor.author | Seo, Jong Hyun | - |
dc.contributor.author | Kim, Pal-gon | - |
dc.date.accessioned | 2021-09-07T12:40:32Z | - |
dc.date.available | 2021-09-07T12:40:32Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2011-05 | - |
dc.identifier.issn | 1071-0922 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/112504 | - |
dc.description.abstract | To overcome the "pseudo-puddling effect" in a low-angle-tilt transfer system with an oversized glass substrate over 2 m, a vertical transfer is suggested. The aim of the present work is to study the wet-etching behavior of an aluminum/molybdenum double layer deposited on the glass substrate in a vertical transfer wet etching system and compare it with a typical 5 degrees-tilt-transfer system. Compared with the tilt-transfer wet station, the vertical etching system has three advantages, namely, 50% space savings, higher throughput due to the high etch rate, and good etch uniformity over the entire glass for thin-film-transistor application. The computational fluid-dynamics analysis is used to predict the change of the etch uniformity as a function of the tilt angle of the glass substrate. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | SOC INFORMATION DISPLAY | - |
dc.title | Study on wet patterning of thin films in vertical-transfer wet station for thin-film-transistor manufacturing | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Hong, Mun-Pyo | - |
dc.identifier.doi | 10.1889/JSID19.5.380 | - |
dc.identifier.scopusid | 2-s2.0-79955061962 | - |
dc.identifier.wosid | 000289712200002 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY, v.19, no.5, pp.380 - 386 | - |
dc.relation.isPartOf | JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY | - |
dc.citation.title | JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY | - |
dc.citation.volume | 19 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 380 | - |
dc.citation.endPage | 386 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Optics | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Optics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordAuthor | Vertical transfer | - |
dc.subject.keywordAuthor | wet etching | - |
dc.subject.keywordAuthor | TFT manufacturing | - |
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