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Simulation Studies of a Pixel-type 3-D Silicon Sensor
- Authors
- Choi, Suyong; Goh, Jungwhan; Ha, Kyungho; Seo, Jiwoong; Yu, Intae
- Issue Date
- 5월-2011
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- Silicon sensor; Simulation; 3-D structures
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.58, no.5, pp.1101 - 1104
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 58
- Number
- 5
- Start Page
- 1101
- End Page
- 1104
- ISSN
- 0374-4884
- Abstract
- Silicon sensors with 3-D structures are expected to tolerate radiation levels higher than those of sensors based on normal planar technologies. We studied the performance of a single-sided 3-D silicon pixel-type sensor by using 3-D semiconductor simulation tools. We expect the 3-D silicon detector to have good charge collection efficiency and position resolution.
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