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A 325 GHz InP HBT Differential-Mode Amplifier
- Authors
- Hacker, J. B.; Lee, Y. M.; Park, H. J.; Rieh, J. -S.; Kim, M.
- Issue Date
- 5월-2011
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- InP HBT; monolithic microwave integrated circuit (MMIC); terahertz amplifier
- Citation
- IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.21, no.5, pp.264 - 266
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
- Volume
- 21
- Number
- 5
- Start Page
- 264
- End Page
- 266
- ISSN
- 1531-1309
- Abstract
- An MMIC amplifier operating at the highest reported frequency up to date for indium-phosphide double-heterojunction bipolar (DHBT) transistor technology is presented. The amplifier chain consists of seven unit-cell stages that contain differential-pair common-base HBTs and compact inverted microstrip matching networks. Amplifier operation in differential mode generates a virtual RF ground at a convenient location inside the unit cell. The measurements at 325 GHz show a small signal gain of 25 dB and a maximum output power of -1.5 dBm. An amplifier gain of greater than 20 dB is observed over 60 GHz bandwidth extending from 285 to 345 GHz.
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