High-speed and low-voltage performance in a charge-trapping flash memory using a NiO tunnel junction
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Seo, Yujeong | - |
dc.contributor.author | An, Ho-Myoung | - |
dc.contributor.author | Kim, Hee-Dong | - |
dc.contributor.author | Hwang, In Rok | - |
dc.contributor.author | Hong, Sa Hwan | - |
dc.contributor.author | Park, Bae Ho | - |
dc.contributor.author | Kim, Tae Geun | - |
dc.date.accessioned | 2021-09-07T13:16:27Z | - |
dc.date.available | 2021-09-07T13:16:27Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2011-04-20 | - |
dc.identifier.issn | 0022-3727 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/112644 | - |
dc.description.abstract | A novel charge-trapping nonvolatile memory using gate injection switching is demonstrated in this paper. This device is composed of metal/NiO/nitride/oxide/silicon in order to make use of the electrical transport phenomenon found in NiO tunnel junctions. Compared with the reference structure of a conventional metal/oxide/nitride/oxide/silicon memory, the proposed device showed a larger memory window, very fast switching speeds of 100 ns/1 mu s and a low operation voltage of +/- 5V for the program/erase states. In addition, we observed that a large number of interface states in the bottom oxide were reduced using deep-level transient spectroscopy. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | TRAPS | - |
dc.title | High-speed and low-voltage performance in a charge-trapping flash memory using a NiO tunnel junction | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Geun | - |
dc.identifier.doi | 10.1088/0022-3727/44/15/155105 | - |
dc.identifier.scopusid | 2-s2.0-79953646833 | - |
dc.identifier.wosid | 000289080700008 | - |
dc.identifier.bibliographicCitation | JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.44, no.15 | - |
dc.relation.isPartOf | JOURNAL OF PHYSICS D-APPLIED PHYSICS | - |
dc.citation.title | JOURNAL OF PHYSICS D-APPLIED PHYSICS | - |
dc.citation.volume | 44 | - |
dc.citation.number | 15 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | TRAPS | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
(02841) 서울특별시 성북구 안암로 14502-3290-1114
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.