Low-resistance Ni/Al Ohmic contacts applied to a nonpolar a-plane n-type GaN
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Dong Ho | - |
dc.contributor.author | Kim, Su Jin | - |
dc.contributor.author | Seo, Yu Jeong | - |
dc.contributor.author | Kim, Tae Geun | - |
dc.contributor.author | Hwang, Sung Min | - |
dc.date.accessioned | 2021-09-07T13:17:35Z | - |
dc.date.available | 2021-09-07T13:17:35Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2011-04-18 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/112650 | - |
dc.description.abstract | The authors report upon a low-resistance Ni/Al Ohmic contact to a nonpolar n-type a-plane GaN with respect to the annealing temperature. The Schottky behavior of the Ni/Al contact changes to a linear Ohmic behavior at a 700 degrees C annealing, at which the specific contact resistivity of the Ni/Al contact became as low as 5.8 X 10(-5) whereas that of a typical Ti/Al contact was 1.6 X 10(-3) Omega cm(2). This improvement is attributed to a lowering of the Schottky barrier height via a Ni-Al interdiffused layer, formed at the interface between the metal and the nonpolar a-plane n-type GaN during the annealing process. (C) 2011 American Institute of Physics. [doi:10.1063/1.3579252] | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | LIGHT-EMITTING-DIODES | - |
dc.subject | SAPPHIRE | - |
dc.subject | FILM | - |
dc.title | Low-resistance Ni/Al Ohmic contacts applied to a nonpolar a-plane n-type GaN | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Geun | - |
dc.identifier.doi | 10.1063/1.3579252 | - |
dc.identifier.scopusid | 2-s2.0-79955399591 | - |
dc.identifier.wosid | 000289842700001 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.98, no.16 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 98 | - |
dc.citation.number | 16 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | LIGHT-EMITTING-DIODES | - |
dc.subject.keywordPlus | SAPPHIRE | - |
dc.subject.keywordPlus | FILM | - |
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