Influence of gate dielectrics on the performance of single-layered organic transistors and bi-layered organic light-emitting transistors prepared by the neutral cluster beam deposition method
DC Field | Value | Language |
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dc.contributor.author | Zhang, Ying | - |
dc.contributor.author | Seo, Hoon-Seok | - |
dc.contributor.author | An, Min-Jun | - |
dc.contributor.author | Oh, Jeong-Do | - |
dc.contributor.author | Choi, Jong-Ho | - |
dc.date.accessioned | 2021-09-07T13:19:54Z | - |
dc.date.available | 2021-09-07T13:19:54Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2011-04-15 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/112663 | - |
dc.description.abstract | The influence of two different SiO(2) and polymethylmethacrylate (PMMA) gate dielectrics on the performance of single-layered organic field-effect transistors and bi-layered organic light-emitting field-effect transistors was examined. Organic active layers of p-type alpha,omega-dihexylsexithiophene and n-type N,N'-ditridecylperylene-3,4,9,10-tetracarboxylic diimide were prepared using the neutral cluster beam deposition method. Characterization of surface morphology, contact angles, structural properties and temperature dependence of field-effect mobilities measured over the temperature range of 10-300 K revealed that compared to the SiO(2) dielectrics, the hydroxyl-free PMMA dielectrics provided better conditions for crystalline film growth. The PMMA-based device characteristics exhibited excellent field-effect mobilities, stress-free operational stability, and electroluminescence through efficient carrier transport and well-balanced ambipolarity under ambient conditions. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3573537] | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | CONJUGATED POLYMERS | - |
dc.subject | AMBIPOLAR | - |
dc.subject | FABRICATION | - |
dc.title | Influence of gate dielectrics on the performance of single-layered organic transistors and bi-layered organic light-emitting transistors prepared by the neutral cluster beam deposition method | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Choi, Jong-Ho | - |
dc.identifier.doi | 10.1063/1.3573537 | - |
dc.identifier.scopusid | 2-s2.0-79955736632 | - |
dc.identifier.wosid | 000290047000201 | - |
dc.identifier.bibliographicCitation | JOURNAL OF APPLIED PHYSICS, v.109, no.8 | - |
dc.relation.isPartOf | JOURNAL OF APPLIED PHYSICS | - |
dc.citation.title | JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 109 | - |
dc.citation.number | 8 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | CONJUGATED POLYMERS | - |
dc.subject.keywordPlus | AMBIPOLAR | - |
dc.subject.keywordPlus | FABRICATION | - |
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