Influence of gate dielectrics on the performance of single-layered organic transistors and bi-layered organic light-emitting transistors prepared by the neutral cluster beam deposition method
- Authors
- Zhang, Ying; Seo, Hoon-Seok; An, Min-Jun; Oh, Jeong-Do; Choi, Jong-Ho
- Issue Date
- 15-4월-2011
- Publisher
- AMER INST PHYSICS
- Citation
- JOURNAL OF APPLIED PHYSICS, v.109, no.8
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF APPLIED PHYSICS
- Volume
- 109
- Number
- 8
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/112663
- DOI
- 10.1063/1.3573537
- ISSN
- 0021-8979
- Abstract
- The influence of two different SiO(2) and polymethylmethacrylate (PMMA) gate dielectrics on the performance of single-layered organic field-effect transistors and bi-layered organic light-emitting field-effect transistors was examined. Organic active layers of p-type alpha,omega-dihexylsexithiophene and n-type N,N'-ditridecylperylene-3,4,9,10-tetracarboxylic diimide were prepared using the neutral cluster beam deposition method. Characterization of surface morphology, contact angles, structural properties and temperature dependence of field-effect mobilities measured over the temperature range of 10-300 K revealed that compared to the SiO(2) dielectrics, the hydroxyl-free PMMA dielectrics provided better conditions for crystalline film growth. The PMMA-based device characteristics exhibited excellent field-effect mobilities, stress-free operational stability, and electroluminescence through efficient carrier transport and well-balanced ambipolarity under ambient conditions. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3573537]
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Collections - College of Science > Department of Chemistry > 1. Journal Articles
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