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Multilevel programming at a low-voltage step using junction avalanche hot carrier injections

Authors
An, Ho-MyoungKim, Hee-DongKim, Tae Geun
Issue Date
11-4월-2011
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.98, no.15
Indexed
SCIE
SCOPUS
Journal Title
APPLIED PHYSICS LETTERS
Volume
98
Number
15
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/112667
DOI
10.1063/1.3579247
ISSN
0003-6951
Abstract
A highly efficient program method is proposed for multilevel programming with a low-voltage step in a conventional polycrystalline silicon-oxide-nitride-oxide-silicon structure. This method uses junction avalanche hot carriers for charge storage in the nitride layer. A multilevel storage is easily obtained by using a low-voltage step of 0.1 V at each level of the three programmed states along with a fast program time of 1 mu s. In addition, a localized charge-injection near the junction edge is clearly observed with an acceptable read margin and threshold voltage difference between the forward and the reverse read at the three programmed states. (C) 2011 American Institute of Physics. [doi:10.1063/1.3579247]
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공과대학 (전기전자공학부)
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