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Effects of Co addition on magneto-transport properties of magnetic tunnel junction consisting of CoFeB or CoFeSiB free layer

Authors
Noh, Su JungChun, Byong SunKim, Young KeunWang, Tianxing
Issue Date
1-4월-2011
Publisher
AMER INST PHYSICS
Citation
JOURNAL OF APPLIED PHYSICS, v.109, no.7
Indexed
SCIE
SCOPUS
Journal Title
JOURNAL OF APPLIED PHYSICS
Volume
109
Number
7
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/112681
DOI
10.1063/1.3565404
ISSN
0021-8979
Abstract
Amorphous ferromagnetic CoFeB and CoFeSiB layers with various Co concentrations were employed as free layers of magnetic tunnel junctions (MTJs), and their magnetization switching performances were compared. Both analytical measurements and micromagnetic modeling efforts were carried out to understand the dependence of magnetization switching field (H-sw) on Co concentration. In overall, the CoFeSiB free layered MTJs showed a lower H-sw compared to that of the CoFeB ones. This is due to the fact that CoFeSiB possesses a lower saturation magnetization than CoFeB and, moreover, its magnetization switching process shows coherent switching. (C) 2011 American Institute of Physics. [doi:10.1063/1.3565404]
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