Electrical Characteristics of GaAs Nanowire-Based MESFETs on Flexible Plastics
- Authors
- Yoon, Changjoon; Cho, Gyoujin; Kim, Sangsig
- Issue Date
- 4월-2011
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Flexible electronics; GaAs; metal-semiconductor field-effect transistors (MESFET); nanowire (NW)
- Citation
- IEEE TRANSACTIONS ON ELECTRON DEVICES, v.58, no.4, pp.1096 - 1101
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE TRANSACTIONS ON ELECTRON DEVICES
- Volume
- 58
- Number
- 4
- Start Page
- 1096
- End Page
- 1101
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/112726
- DOI
- 10.1109/TED.2011.2107518
- ISSN
- 0018-9383
- Abstract
- GaAs nanowire (NW)-based metal-semiconductor field-effect transistors (MESFETs) were constructed on flexible plastic substrates by a conventional top-down approach. The top-down approach utilized in this paper combines photolithography of high-quality GaAs bulk wafers with anisotropic chemical etching processes for preparation of GaAs NWs and photolithographic processes for formation of metal electrodes. For a representative GaAs NW-based MESFET, peak transconductance, the I(on)/I(off) ratio, and the subthreshold slope are estimated to be approximately 19.7 mu S, similar to 10(7), and similar to 100 mV/dec, respectively. The electrical characteristics of the GaAs NW-based MESFETs were maintained during 3000 times of bending cycles under maximal tensile strains of 0.77% and 1.02%. These results demonstrate the possibility of using these devices in high-speed and high-performance flexible electronics.
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