Improved Crystal Quality and Surface Morphology of Nonpolar a-plane GaN Grown on r-plane Sapphire Substrates
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Dong Ho | - |
dc.contributor.author | Kim, Su Jin | - |
dc.contributor.author | Chae, Doug Ju | - |
dc.contributor.author | Yang, Ji Won | - |
dc.contributor.author | Sim, Jae In | - |
dc.contributor.author | Kim, Tae Geun | - |
dc.contributor.author | Hwang, Sung Min | - |
dc.date.accessioned | 2021-09-07T13:42:48Z | - |
dc.date.available | 2021-09-07T13:42:48Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2011-04 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/112768 | - |
dc.description.abstract | In this paper, we report on the improved crystal quality and surface morphology of nonpolar a-plane ([11-20]) GaN layers grown on r-plane ([1-102]) sapphire substrates by using a metal-organic chemical vapor deposition. Both the reactor pressure and the V/III ratio were modulated using two-steps during the growth in order to optimize the growth conditions for the fully coalesced GaN layers with smooth surfaces. As a result, a root-mean-square roughness of 0.678 rim was observed with atomic-force microscopy for the nonpolar a-plane GaN, and the full-widths at half-maximum values of the omega-rocking curve were 432 and 648 arcsec from the c- and the in-direction parallel scans, respectively. The low-temperature photoluminescence spectra were also investigated to identify the origin of the improvement in the crystallinity. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.subject | GALLIUM NITRIDE | - |
dc.subject | FIELD | - |
dc.subject | WELL | - |
dc.title | Improved Crystal Quality and Surface Morphology of Nonpolar a-plane GaN Grown on r-plane Sapphire Substrates | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Geun | - |
dc.identifier.doi | 10.3938/jkps.58.873 | - |
dc.identifier.scopusid | 2-s2.0-79955055334 | - |
dc.identifier.wosid | 000289611600001 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.58, no.4, pp.873 - 877 | - |
dc.relation.isPartOf | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 58 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 873 | - |
dc.citation.endPage | 877 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.identifier.kciid | ART001545044 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordPlus | GALLIUM NITRIDE | - |
dc.subject.keywordPlus | FIELD | - |
dc.subject.keywordPlus | WELL | - |
dc.subject.keywordAuthor | Nonpolar | - |
dc.subject.keywordAuthor | GaN | - |
dc.subject.keywordAuthor | MOCVD | - |
dc.subject.keywordAuthor | Crystallinity | - |
dc.subject.keywordAuthor | Surface morphology | - |
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