Optical Properties of a NiO/Al-based Reflector for High-power Ultraviolet Light-emitting Diodes
- Authors
- Chae, Dong Ju; Kim, Dong Yoon; Kim, Dong Ho; Kim, Su Jin; Kim, Tae Geun
- Issue Date
- 4월-2011
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- Ultraviolet light-emitting diodes; Reflector; Nickel oxide
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.58, no.4, pp.990 - 993
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 58
- Number
- 4
- Start Page
- 990
- End Page
- 993
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/112799
- DOI
- 10.3938/jkps.58.990
- ISSN
- 0374-4884
- Abstract
- We report the optical properties of a nickel oxide (NiO)/Al-based p-type reflector for vertical-type ultra-violet (UV) light-emitting diodes. The NiO film, a p-type transparent conductive oxide material, has been used as p-type Ohmic materials for wide bandgap materials; however, its optical properties have not yet been optimized for applications in the UV range. In this work, we first deposited a 10-nm-thick NiO films on AlGaN epilayers and then annealed them at temperature from 500 degrees C to 900 degrees C by using a rapid thermal process for 1 min similar to 30 min to optimize the transmittance; then, the Al reflector with an optimized transmittance was deposited on indium-tin-oxide films. Finally, we obtained an 84% transmittance from the NiO film and a 51% reflectance from the NiO/Al reflector at 365 nm after annealing at 800 degrees C for 20 min in an oxygen ambient.
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