Fabrication and Evaluation of Nanopillar-Shaped Phase-Change Memory Devices
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hong, Sung-Hoon | - |
dc.contributor.author | Shin, Ju-Hyeon | - |
dc.contributor.author | Bae, Byeong-Ju | - |
dc.contributor.author | Lee, Heon | - |
dc.date.accessioned | 2021-09-07T14:27:48Z | - |
dc.date.available | 2021-09-07T14:27:48Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2011-03 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/112907 | - |
dc.description.abstract | In this study, nanopillar-shaped phase-change memory devices of various sizes were simply fabricated by nanosphere lithography, and their electrical characteristics were evaluated by conductive atomic force microscopy (AFM). As nanosphere materials, 180-nm diameter polystyrene balls were used for a size-controllable mask, silica balls with a diameter of 200 nm for a high etching-resistance mask, and sub-50 nm Ag nanoparticles were used for sub-50-nm-scale fabrication. Using the polystyrene balls, silica balls, and Ag nanoparticles, nanopillar-shaped phase-change memory devices with various diameters, heights as large as 1 mu m, and sizes as small as less than 50 nm were successfully fabricated. The electrical properties of the nanopillar-shaped Ge2Sb2Te5 devices were evaluated by conductive AFM with an electrical measurement system. (C) 2011 The Japan Society of Applied Physics | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | NANOSPHERE LITHOGRAPHY | - |
dc.subject | NONVOLATILE | - |
dc.title | Fabrication and Evaluation of Nanopillar-Shaped Phase-Change Memory Devices | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Heon | - |
dc.identifier.doi | 10.1143/JJAP.50.036501 | - |
dc.identifier.scopusid | 2-s2.0-79953087854 | - |
dc.identifier.wosid | 000288649800081 | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.50, no.3 | - |
dc.relation.isPartOf | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 50 | - |
dc.citation.number | 3 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | NANOSPHERE LITHOGRAPHY | - |
dc.subject.keywordPlus | NONVOLATILE | - |
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