Fabrication and Evaluation of Nanopillar-Shaped Phase-Change Memory Devices
- Authors
- Hong, Sung-Hoon; Shin, Ju-Hyeon; Bae, Byeong-Ju; Lee, Heon
- Issue Date
- 3월-2011
- Publisher
- IOP PUBLISHING LTD
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, v.50, no.3
- Indexed
- SCIE
SCOPUS
- Journal Title
- JAPANESE JOURNAL OF APPLIED PHYSICS
- Volume
- 50
- Number
- 3
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/112907
- DOI
- 10.1143/JJAP.50.036501
- ISSN
- 0021-4922
- Abstract
- In this study, nanopillar-shaped phase-change memory devices of various sizes were simply fabricated by nanosphere lithography, and their electrical characteristics were evaluated by conductive atomic force microscopy (AFM). As nanosphere materials, 180-nm diameter polystyrene balls were used for a size-controllable mask, silica balls with a diameter of 200 nm for a high etching-resistance mask, and sub-50 nm Ag nanoparticles were used for sub-50-nm-scale fabrication. Using the polystyrene balls, silica balls, and Ag nanoparticles, nanopillar-shaped phase-change memory devices with various diameters, heights as large as 1 mu m, and sizes as small as less than 50 nm were successfully fabricated. The electrical properties of the nanopillar-shaped Ge2Sb2Te5 devices were evaluated by conductive AFM with an electrical measurement system. (C) 2011 The Japan Society of Applied Physics
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