A dual analyzer for real-time impedance and noise spectroscopy of nanoscale devices
DC Field | Value | Language |
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dc.contributor.author | Joo, Min-Kyu | - |
dc.contributor.author | Kang, Pilsoo | - |
dc.contributor.author | Kim, Yongha | - |
dc.contributor.author | Kim, Gyu-Tae | - |
dc.contributor.author | Kim, Sangtae | - |
dc.date.accessioned | 2021-09-07T14:43:13Z | - |
dc.date.available | 2021-09-07T14:43:13Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2011-03 | - |
dc.identifier.issn | 0034-6748 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/112993 | - |
dc.description.abstract | This paper introduces a simple portable dual analyzer which allows real-time ac-impedance measurements and noise spectroscopic analysis simultaneously, employing one or two data acquisition systems together with a low noise current-to-voltage preamplifier. The input signal composed of numerous selected frequencies of sinusoidal voltages with a dc bias was applied to a device under the test (DUT): single walled carbon nanotube field effect transistors (SWCNT-FETs). Each frequency component, ranging from 1 to 46.4 kHz, was successfully mapped to a Nyquist plot using the background of the electrical noise power spectrum. It is, thus, clearly demonstrated that this dual analyzer enables the real-time ac-impedance analysis and the frequency response of the carrier transport in the SWCNT-FETs as a DUT. (C) 2011 American Institute of Physics. [doi:10.1063/1.3553208] | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | ELECTRICAL-CONDUCTIVITY | - |
dc.subject | 1/F NOISE | - |
dc.subject | CARBON NANOTUBES | - |
dc.subject | RESISTANCE | - |
dc.subject | TRANSPORT | - |
dc.subject | MOSFET | - |
dc.title | A dual analyzer for real-time impedance and noise spectroscopy of nanoscale devices | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Gyu-Tae | - |
dc.identifier.doi | 10.1063/1.3553208 | - |
dc.identifier.scopusid | 2-s2.0-79953654021 | - |
dc.identifier.wosid | 000289149600062 | - |
dc.identifier.bibliographicCitation | REVIEW OF SCIENTIFIC INSTRUMENTS, v.82, no.3 | - |
dc.relation.isPartOf | REVIEW OF SCIENTIFIC INSTRUMENTS | - |
dc.citation.title | REVIEW OF SCIENTIFIC INSTRUMENTS | - |
dc.citation.volume | 82 | - |
dc.citation.number | 3 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Instruments & Instrumentation | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Instruments & Instrumentation | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | ELECTRICAL-CONDUCTIVITY | - |
dc.subject.keywordPlus | 1/F NOISE | - |
dc.subject.keywordPlus | CARBON NANOTUBES | - |
dc.subject.keywordPlus | RESISTANCE | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordPlus | MOSFET | - |
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