Growth of amorphous silica nanowires using nickel silicide catalyst by a thermal annealing process
DC Field | Value | Language |
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dc.contributor.author | Lee, Jin-Bok | - |
dc.contributor.author | Choi, Chel-Jong | - |
dc.contributor.author | Seong, Tae-Yeon | - |
dc.date.accessioned | 2021-09-07T14:45:05Z | - |
dc.date.available | 2021-09-07T14:45:05Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2011-03 | - |
dc.identifier.issn | 1567-1739 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/113005 | - |
dc.description.abstract | We report on the growth of NiSi2-catalyzed amorphous SiO2 nanowires by rapid-thermal-annealing of Ni (40 nm)/poly-Si(60 nm)/SiO2(110 nm)/undoped Si substrate structures at 900 degrees C in N-2 ambient. The diameter of the nanowires is dependent on the diameter of the NiSi2 catalyst particles; the former is about 16-45% smaller than the later. Considering the presence of the nanoparticles located at the tip of the nanowires, the growth behavior of the a-SiO2 nanowires is described in terms of the generation of SiO vapor and the VLS mechanism. (C) 2010 Elsevier B. V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject | HYDROGEN IMPLANTATION | - |
dc.subject | ELECTRICAL-PROPERTIES | - |
dc.subject | TEMPERATURE | - |
dc.subject | NANOFIBERS | - |
dc.subject | LAYER | - |
dc.title | Growth of amorphous silica nanowires using nickel silicide catalyst by a thermal annealing process | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Seong, Tae-Yeon | - |
dc.identifier.doi | 10.1016/j.cap.2010.07.006 | - |
dc.identifier.scopusid | 2-s2.0-78649911827 | - |
dc.identifier.wosid | 000284576900009 | - |
dc.identifier.bibliographicCitation | CURRENT APPLIED PHYSICS, v.11, no.2, pp.199 - 202 | - |
dc.relation.isPartOf | CURRENT APPLIED PHYSICS | - |
dc.citation.title | CURRENT APPLIED PHYSICS | - |
dc.citation.volume | 11 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 199 | - |
dc.citation.endPage | 202 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART001537233 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | HYDROGEN IMPLANTATION | - |
dc.subject.keywordPlus | ELECTRICAL-PROPERTIES | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | NANOFIBERS | - |
dc.subject.keywordPlus | LAYER | - |
dc.subject.keywordAuthor | Silica nanowires | - |
dc.subject.keywordAuthor | Nickel silicide | - |
dc.subject.keywordAuthor | Rapid-thermal-annealing | - |
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