Low-Resistance Nonalloyed Ti/Al Ohmic Contacts on N-Face n-Type GaN via an O-2 Plasma Treatment
DC Field | Value | Language |
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dc.contributor.author | Kim, Su Jin | - |
dc.contributor.author | Nam, Tae Yang | - |
dc.contributor.author | Kim, Tae Geun | - |
dc.date.accessioned | 2021-09-07T15:30:20Z | - |
dc.date.available | 2021-09-07T15:30:20Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2011-02 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/113120 | - |
dc.description.abstract | The authors report improved electrical properties of nonalloyed Ti/Al ohmic contact to N-face n-type GaN via oxygen (O-2) plasma treatment. The contact resistivity of Ti (50 nm)/Al (35 nm) electrodes is reduced significantly from 4.3 x 10(-1) Omega.cm(2) to 2.53 x 10(-5) Omega.cm(2) by applying O-2 plasma to the GaN surface before the Ti/Al deposition. In this process, Ti-N bonds are expected to form, while the Ga-N bonds are broken by the O-2 plasma, which eventually increases the nitrogen vacancies as well as the Ti-N phases at the GaN surface. This suggestion has been verified by X-ray photoelectron spectroscopy and transmission electron microscopy analyses. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | CRYSTAL POLARITY | - |
dc.title | Low-Resistance Nonalloyed Ti/Al Ohmic Contacts on N-Face n-Type GaN via an O-2 Plasma Treatment | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Geun | - |
dc.identifier.doi | 10.1109/LED.2010.2093556 | - |
dc.identifier.scopusid | 2-s2.0-79151482320 | - |
dc.identifier.wosid | 000286677700013 | - |
dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.32, no.2, pp.149 - 151 | - |
dc.relation.isPartOf | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.volume | 32 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 149 | - |
dc.citation.endPage | 151 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordPlus | CRYSTAL POLARITY | - |
dc.subject.keywordAuthor | GaN | - |
dc.subject.keywordAuthor | N-face | - |
dc.subject.keywordAuthor | ohmic contacts | - |
dc.subject.keywordAuthor | oxygen plasma | - |
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