Full wafer scale nanoimprint lithography for GaN-based light-emitting diodes
DC Field | Value | Language |
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dc.contributor.author | Byeon, Kyeong-Jae | - |
dc.contributor.author | Hong, Eun-Ju | - |
dc.contributor.author | Park, Hyoungwon | - |
dc.contributor.author | Cho, Joong-Yeon | - |
dc.contributor.author | Lee, Seong-Hwan | - |
dc.contributor.author | Jhin, Junggeun | - |
dc.contributor.author | Baek, Jong Hyeob | - |
dc.contributor.author | Lee, Heon | - |
dc.date.accessioned | 2021-09-07T15:57:48Z | - |
dc.date.available | 2021-09-07T15:57:48Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2011-01-31 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/113240 | - |
dc.description.abstract | A UV-imprinting process for a full wafer was developed to enhance the light extraction of GaN-based green light-emitting diodes (LEDs). A polyvinyl chloride flexible stamp was used in the imprinting process to compensate for the poor flatness of the LED wafer. Two-dimensional photonic crystal patterns with pitches ranging from 600 to 900 nm were formed on the p-GaN top cladding layer of a 2 inch diameter wafer using nanoimprint and reactive ion etching processes. As a result, the optical output power of the patterned LED device was increased by up to 44% at a driving current of 20 mA by suppressing the total internal reflection and enhancing the irregular scattering of photons at the patterned p-GaN surface. (C) 2010 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.subject | PHOTONIC CRYSTALS | - |
dc.subject | EXTRACTION EFFICIENCY | - |
dc.subject | P-GAN | - |
dc.subject | FABRICATION | - |
dc.subject | SURFACE | - |
dc.subject | ENHANCEMENT | - |
dc.subject | PERFORMANCE | - |
dc.subject | STAMP | - |
dc.title | Full wafer scale nanoimprint lithography for GaN-based light-emitting diodes | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Heon | - |
dc.identifier.doi | 10.1016/j.tsf.2010.10.039 | - |
dc.identifier.scopusid | 2-s2.0-78751645439 | - |
dc.identifier.wosid | 000287543300034 | - |
dc.identifier.bibliographicCitation | THIN SOLID FILMS, v.519, no.7, pp.2241 - 2246 | - |
dc.relation.isPartOf | THIN SOLID FILMS | - |
dc.citation.title | THIN SOLID FILMS | - |
dc.citation.volume | 519 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | 2241 | - |
dc.citation.endPage | 2246 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | PHOTONIC CRYSTALS | - |
dc.subject.keywordPlus | EXTRACTION EFFICIENCY | - |
dc.subject.keywordPlus | P-GAN | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | SURFACE | - |
dc.subject.keywordPlus | ENHANCEMENT | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | STAMP | - |
dc.subject.keywordAuthor | Gallium nitride | - |
dc.subject.keywordAuthor | Light-emitting diodes | - |
dc.subject.keywordAuthor | Nanoimprint | - |
dc.subject.keywordAuthor | Photonic crystal | - |
dc.subject.keywordAuthor | Full wafer scale | - |
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